2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3224 features low on-state resistance r ds(on)1 =40m max. (v gs =10v,i d =10a) r ds(on)2 =60m max. (v gs =4.0v,i d =10a) low c iss :c iss = 790 pf typ. built-ingateprotectiondiode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v v gss (ac) 20 v v gss (dc) +20,-10 v i d 20 a i dp * 70 a power dissipation t c =25 25 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current gate to source voltage p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate to source cut off voltage v gs(off) v ds =10v,i d =1ma 1..0 1.5 2.0 v forward transfer admittance y fs v ds =10v,i d =10a 8.0 15 s v gs =10v,i d =10a 24 40 m v gs =4v,i d =10a 33 60 m input capacitance c iss 790 pf output capacitance c oss 240 pf reverse transfer capacitance c rss 100 pf turn-on delay time t on 19 ns rise time t r 165 ns turn-off delay time t off 62 ns fall time tf 71 ns v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,r g =10 ,v dd =30v r ds(on) drain to source on-state resistance 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification
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